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STP80NF55-06FP

Part No STP80NF55-06FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 60A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 189nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 054276-STP80NF55-06FP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP80NF55-06FP CAD Model

Description

The STP80NF55-06FP is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver the efficiency and speed needed for a wide range of power management applications. With its advanced technology, the STP80NF55-06FP offers low on-resistance, high switching performance, and exceptional thermal characteristics, making it an ideal choice for high-efficiency power supplies, motor controls, and other power-intensive electronic circuits.

Key Features

  • Low On-Resistance (RDS(on)): The device boasts an exceptionally low drain-source on-resistance, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current rating of up to 80A, the STP80NF55-06FP can handle high current loads, making it suitable for demanding applications.
  • High Switching Speed: The fast switching speed of this MOSFET enables efficient operation at high frequencies, which is crucial for reducing energy losses in switching applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness under stress conditions.
  • Low Gate Charge (Qg): A low gate charge facilitates faster switching and reduces the power required to drive the MOSFET, contributing to energy savings.
  • Enhanced Body Diode: The MOSFET features an improved body diode with low reverse recovery time (trr), which is beneficial in applications with frequent switching.

Applications

The versatility of the STP80NF55-06FP makes it suitable for a variety of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • DC-to-AC Inverters
  • DC-to-DC Converters
  • Motor Drives
  • Automotive Applications
  • Power Management Functions

Package and Quality

The STP80NF55-06FP is housed in a TO-220FP package, which provides an optimal balance between power dissipation and size, making it suitable for compact designs. The package is designed for through-hole mounting, which enhances mechanical robustness and thermal management. STMicroelectronics' commitment to quality ensures that each MOSFET meets the highest standards of performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,180 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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