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STP90N55F4

Part No STP90N55F4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 038603-STP90N55F4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP90N55F4 CAD Model

Description

STP90N55F4 - N-Channel MOSFET by STMicroelectronics

The STP90N55F4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This particular MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including but not limited to, switch-mode power supplies, motor control, and automotive systems. With its advanced technology and robust design, the STP90N55F4 is well-suited for high-power and high-efficiency applications.

Key Features

  • Low On-Resistance: The STP90N55F4 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: With a continuous drain current (ID) rating of up to 80A, this MOSFET can handle high current loads, making it ideal for demanding power applications.
  • High Voltage Tolerance: The device can withstand drain-source voltages (VDSS) up to 55V, providing a good safety margin for fluctuating supply voltages.
  • Low Gate Charge: The low gate charge (Qg) characteristic of the STP90N55F4 ensures fast switching performance, which is crucial for reducing switching losses in power conversion systems.
  • 100% Avalanche Tested: This MOSFET is guaranteed to be avalanche tested, ensuring reliability and robustness against high-energy pulses.

Applications

  • Switch-Mode Power Supplies (SMPS)
  • DC/DC and AC/DC converters
  • Motor Control Systems
  • Automotive Applications
  • Power Management Solutions

The STP90N55F4 is housed in a TO-220 package, which is widely used and known for its ease of integration into various circuit designs. The combination of high performance, efficiency, and reliability makes the STP90N55F4 a preferred choice for designers looking to optimize their power management systems.

STMicroelectronics provides comprehensive technical documentation for the STP90N55F4, including datasheets, application notes, and design resources, to support engineers in implementing this MOSFET into their designs effectively.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6191 $58.8145
230+ $0.5082 $116.8860
355+ $0.4920 $174.6600
490+ $0.4759 $233.1910
630+ $0.4608 $290.3040
845+ $0.4123 $348.3935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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