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STS4DNF60L

Part No STS4DNF60L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 4A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 55 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1030pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 027849-STS4DNF60L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name STS4DNF60
Introduction Date December 07, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian STS4DNF60L CAD Model

Description

The STS4DNF60L is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor technology. This MOSFET utilizes the latest advancements in silicon technology to deliver superior switching performance and energy efficiency, making it an ideal choice for a wide range of power applications.

Key Features

  • Low On-Resistance: The STS4DNF60L boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET minimizes switching losses and is suitable for high-frequency power switching applications.
  • Low Gate Charge: The minimized gate charge (Q<sub>g) ensures that less energy is required to control the MOSFET, leading to lower power dissipation and improved thermal management.
  • Enhanced Durability: The device is designed to withstand high energy pulses in the avalanche and commutation modes, which enhances its reliability and longevity in demanding situations.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring a robust and dependable component for power electronics systems.

Applications

The versatility of the STS4DNF60L allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting Solutions
  • Automotive Applications

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 60V Continuous Drain Current (I<sub>D) 4A Power Dissipation (P<sub>D) 30W Operating Temperature Range -55°C to 150°C

With its strong performance characteristics and reliability, the STS4DNF60L from STMicroelectronics stands out as a top choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3821 $51.5835
280+ $0.3580 $100.2400
435+ $0.3459 $150.4665
625+ $0.3217 $201.0625
810+ $0.3096 $250.7760
1,010+ $0.2975 $300.4750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,532 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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