STU5N60M2 - Power MOSFET by STMicroelectronics

The STU5N60M2 is a robust and efficient power MOSFET designed by STMicroelectronics, tailored for high-performance power switching applications. This advanced power device is based on the innovative MDmesh™ M2 technology which combines excellent RDS(on) per area with reduced gate charge, ensuring high efficiency in a wide range of applications.

Key Features

• High Voltage Capability: The STU5N60M2 is capable of withstanding up to 600V, making it suitable for high voltage applications.
• Low On-Resistance: With an RDS(on) of only 1.7 Ω, the device ensures minimal power loss and improved overall efficiency.
• Reduced Gate Charge: The reduced gate charge (Qg) allows for faster switching speeds and reduced switching losses, which is crucial for high-frequency applications.
• High dv/dt Capability: This MOSFET is designed to handle fast voltage changes, ensuring reliability under rapid switching conditions.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.

Applications

The STU5N60M2 is versatile and can be effectively used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High-efficiency DC-DC converters
• Motor Control
• Power Factor Correction (PFC) circuits
• Lighting applications, including LED drivers

Package and Quality

The STU5N60M2 comes in a TO-251 (IPAK) package, which is designed for optimal thermal performance and compactness. STMicroelectronics is committed to delivering high-quality products, and the STU5N60M2 is no exception. It is produced in state-of-the-art manufacturing facilities, ensuring high reliability and performance consistency for your power management solutions.

For detailed specifications, datasheets, and application notes, customers are encouraged to visit the official STMicroelectronics website or contact their local sales representative.