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STU70N2LH5

Part No STU70N2LH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 48A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 8nC @ 5V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±22V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1104007-STU70N2LH5
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STU70N2LH5 CAD Model

Description

Introducing the STU70N2LH5 Power MOSFET from STMicroelectronics

The STU70N2LH5 is a cutting-edge Power MOSFET device crafted by the renowned semiconductor manufacturer, STMicroelectronics. This high-performance component is designed to meet the stringent requirements of modern power electronics applications. With its robust construction and state-of-the-art technology, the STU70N2LH5 is an ideal choice for a wide range of applications, including switch-mode power supplies, motor control systems, and power management solutions.

Key Features

  • Low On-Resistance: The STU70N2LH5 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: With its ability to handle high currents, this Power MOSFET is well-suited for applications that require robust power handling capabilities.
  • Enhanced Thermal Performance: The device is encapsulated in a highly thermal-efficient package, which aids in superior heat dissipation, ensuring reliable operation even under high-temperature conditions.

Advanced Technology

The STU70N2LH5 is manufactured using STMicroelectronics' advanced STripFET™ H5 technology, which provides a perfect balance between low gate charge and low on-resistance, resulting in a highly efficient and reliable component. The STripFET™ H5 technology is known for its low intrinsic capacitance and gate charge, which significantly improves the switching performance of the MOSFET.

Applications

The versatility of the STU70N2LH5 allows it to be used in a variety of applications, including but not limited to:

  • DC/DC converters
  • Power management systems
  • High-efficiency power supplies
  • Motor drives and inverters
  • Automotive applications

Reliability and Performance

STMicroelectronics is committed to delivering products that exceed industry standards for reliability and performance. The STU70N2LH5 is no exception, with its robust design and comprehensive testing to ensure it meets the highest quality benchmarks. Customers can trust in the reliability and long service life of this Power MOSFET, making it a smart investment for any power electronics system.

For detailed specifications and application notes, engineers and designers are encouraged to consult the STU70N2LH5 datasheet available through STMicroelectronics' official website or authorized distributors.

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