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STW12NK90Z

Part No STW12NK90Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 11A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 152nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 880 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 038391-STW12NK90Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STW12NK90
Introduction Date July 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian STW12NK90Z CAD Model

Description

The STW12NK90Z is a high voltage Power MOSFET designed by STMicroelectronics, aiming to provide the perfect balance between high efficiency and robustness for power conversion applications. This advanced MOSFET is part of the SuperMESH™ family, which is known for its unique combination of features that enhance performance and reliability.

Key Features

  • Extreme dv/dt Capability: The STW12NK90Z is engineered to withstand high voltage transitions, making it suitable for rugged applications.
  • 100% Avalanche Tested: Each component is thoroughly tested to ensure its durability and reliability in scenarios where the MOSFET is pushed to its limits.
  • Gate Charge Minimized: This feature reduces the switching losses, allowing for more efficient operation, especially in high-frequency power switching applications.
  • Very Low Intrinsic Capacitances: The reduced capacitances lead to less energy being wasted in the form of heat, contributing to the overall efficiency of the device.
  • Zener-Protected: The built-in Zener diode protects the gate from voltage spikes, enhancing the MOSFET's longevity and stability.

Applications

The STW12NK90Z is ideal for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Power Factor Correction Circuits
  • Electronic Ballasts for Fluorescent Lighting
  • Motor Control

With a V<sub>DS of 900V and a low on-resistance of 0.65 ohm, the STW12NK90Z is particularly suitable for high voltage applications that require a robust and efficient power MOSFET. Its TO-247 package is designed for easy mounting and heat dissipation, which is critical for maintaining performance and extending the service life of the device.

STMicroelectronics' STW12NK90Z is a testament to their commitment to providing innovative semiconductor solutions. Its robust design and advanced technology make it an excellent choice for designers looking to improve system performance while ensuring reliability and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9847 $50.7399
36+ $2.7958 $100.6488
56+ $2.7013 $151.2728
80+ $2.5124 $200.9920
104+ $2.4180 $251.4720
130+ $2.3235 $302.0550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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