The TN2501N8 is a high voltage N-channel enhancement-mode MOSFET from Supertex (now Microchip Technology). It is designed for high-voltage switching applications requiring efficient and reliable performance. This MOSFET features a low on-resistance (RDS(on)) and fast switching speeds, making it suitable for power conversion and control circuits.

Applications:

• High Voltage Power Supplies: Used in high-voltage power supplies for industrial and medical equipment.
• Solid State Relays (SSRs): Employed in SSRs for switching high-voltage loads.
• LED Lighting: Used in LED lighting drivers and control circuits.
• High Voltage Motor Control: Integrated into motor control systems requiring high-voltage operation.
• DC-DC Converters: Can be implemented in DC-DC converters for high-voltage applications.

Features:

• High Voltage Operation: Operates with drain-source voltages up to 250V.
• Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
• Fast Switching Speed: Facilitates efficient switching performance.
• Enhancement-Mode: Requires a positive gate-source voltage to turn on.
• Avalanche Energy Rated: Can withstand high avalanche energy.
• Small Package: Available in a compact TO-251 (IPA) package for space-constrained designs.

Benefits:

• Improved Efficiency: Low RDS(on) reduces power dissipation, resulting in higher energy efficiency.
• Reliable Operation: High voltage rating and avalanche energy rating ensure reliable performance.
• Compact Design: Small package size enables integration in space-constrained applications.
• Simplified Circuit Design: Enhancement-mode operation simplifies the design of driving circuits.

Technical Specifications:

The TN2501N8 features a drain-source voltage (VDS) of 250V and a continuous drain current (ID) of up to 2.5A (depending on the mounting and ambient temperature). The RDS(on) is typically less than 2.5 ohms at VGS = 10V. It is designed to operate over a wide temperature range. The gate-source voltage (VGS) is rated at ±20V. The maximum power dissipation is dependent on the thermal resistance of the PCB and the ambient temperature.