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HERAF806G

Part No HERAF806G
Manufacturer Taiwan Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 8A ITO220AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Taiwan Semiconductor
Package Tube
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Capacitance @ Vr, F 60pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package ITO-220AC
Operating Temperature - Junction -55°C ~ 150°C
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 597369-HERAF806G
Ultra Librarian 3D Model Ultra Librarian HERAF806G CAD Model

Description

The HERAF806G is a fast recovery rectifier diode with a voltage rating of 600V and an average rectified current of 8A.

  • Applications: It is designed for use in applications that require high-speed switching and low forward voltage drop.
  • Forward Voltage: 1.7V @ a current of 8A.
  • Reverse Recovery Time: 80ns.
  • Reverse Leakage Current: 10µA @ a reverse voltage of 600V.
  • Capacitance: 60pF @ a voltage of 4V and frequency of 1MHz.
  • Mounting: through-hole mountable.
  • Package: comes in a TO-220-2 Full Pack package.
  • Manufacturer: manufactured by Taiwan Semiconductor.
  • Status: an active product.
  • Operating Temperature Range: -55°C to 150°C.
  • REACH: not affected by REACH regulations.

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