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Same model may have multiple batches, images only for reference.
TSC5304EDCP Real Image
Same model may have multiple batches, images only for reference.

TSC5304EDCP

Part No TSC5304EDCP
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Description TO-252 (D-PAK) 700V 4A NPN Bipolar Transistor
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Breakdown Voltage 51 V
Clamping Voltage 70.1 V
Collector Base Voltage (VCBO) 700 V
Collector Emitter Saturation Voltage 3 V
Collector Emitter Voltage (VCEO) 400 V
Continuous Collector Current 4 A
Drain to Source Voltage (Vdss) -60 V
Emitter Base Voltage (VEBO) 9 V
Forward Voltage 1 V
Gate to Source Voltage (Vgs) -1.5 V
hFE Min 8
Input Capacitance 436 pF
Max Breakdown Voltage 9.8 V
Max Forward Surge Current (Ifsm) 2.5 A
Max Junction Temperature (Tj) 150 °C
Max Repetitive Reverse Voltage (Vrrm) 250 V
Max Reverse Leakage Current 1 µA
Min Breakdown Voltage 25.4 V
Number of Channels 2
Peak Pulse Current 21.4 A
Peak Pulse Power 1.5 kW
Polarity NPN
Power Dissipation 200 mW
Reverse Recovery Time 50 ns
Reverse Standoff Voltage 24 V
Test Current 2.5 mA
Zener Voltage 75 V
Win Source Part Number 1101390-TSC5304EDCP
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSC5304EDCP CAD Model

Description

The Taiwan Semiconductor TSC5304EDCP is an NPN transistor with a drain to source voltage (Vdss) of -60 V and a collector emitter voltage (VCEO) of 400 V.

  • Maximum Junction Temperature (Tj): 150 °C
  • Continuous Collector Current: 4 A
  • Peak Pulse Power: 1.5 kW
  • Peak Pulse Current: 21.4 A
  • Maximum Reverse Leakage Current: 1 µA
  • Breakdown Voltage: 51 V
  • Reverse Recovery Time: 50 ns
  • Maximum Forward Surge Current (Ifsm): 2.5 A
  • Usage: OEM parts

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