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Same model may have multiple batches, images only for reference.
TSM10N06CP ROG
Same model may have multiple batches, images only for reference.

TSM10N06CP ROG

Part No TSM10N06CP ROG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.5nC @ 4.5V
Max Input Capacitance 1100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1114709-TSM10N06CP ROG
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian TSM10N06CP ROG CAD Model

Description

The Taiwan Semiconductor 1114709-TSM10N06CP ROG is an N-channel MOSFET with a maximum power dissipation of 45W (Tc).

  • Packaging: Reel - TR
  • Status: Active
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 10A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 10.5nC @ 4.5V
  • Maximum Input Capacitance: 1100pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 65 mOhm @ 10A, 10V
  • Supply and Demand Status: Sufficient

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