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Same model may have multiple batches, images only for reference.
TSM10NC65CF Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM10NC65CF

Part No TSM10NC65CF
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 650V, 10A, SINGLE N-CHANNEL POWE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 50 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220S
Package / Case TO-220-3 Full Pack
Base Product Number TSM10
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380159-TSM10NC65CF
Ultra Librarian 3D Model Ultra Librarian TSM10NC65CF CAD Model

Description

The TSM10NC65CF is a high-performance N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation.

  • Drain-to-Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • On-Resistance (Rds On): 900mOhm
  • Gate Threshold Voltage (Vgs(th)): 4.5V
  • Gate Charge (Qg): 34nC
  • Package: TO-220-3 full pack
  • Application: power management and motor control.

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