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TSM1N45CT B0G

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Part No	TSM1N45CT B0G
Manufacturer	Taiwan Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET, SINGLE, N-CHANNEL, PLANA
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Taiwan Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	450V
Continuous Drain Current at 25°C	500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4.25V @ 250μA
Max Gate Charge	6.5nC @ 10V
Max Input Capacitance	235pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	2W (Tc)
Maximum Rds On at Id,Vgs	4.25 Ohm @ 250mA, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-92
Dimension	TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number	1114716-TSM1N45CT B0G
Popularity	Medium
Supply and Demand Status	Sufficient
Quantity per package	1k pcs
Ultra Librarian 3D Model	Ultra Librarian TSM1N45CT B0G CAD Model

Alternative Products

Description

Taiwan Semiconductor presents an N-channel MOSFET with the Win Source Part Number 1114716-TSM1N45CT B0G.

Win Source Part Number: 1114716-TSM1N45CT B0G
Case/Package: TO-92
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current: 500mA (Tc) @ 25°C
Gate-Source Threshold Voltage: 4.25V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On @ Id,Vgs: 4.25 Ohm @ 250mA, 10V
Packaging: Reel - TR
Mounting: Through-Hole
Technology: MOSFET
ECCN: EAR99
Temperature Range: -55°C to 150°C (TJ)
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Quantity Per Package: 1k pcs

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