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A2T21H410-24SR6

Part No A2T21H410-24SR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS (Dual)
Frequency 2.17GHz
Gain 15.6dB
Voltage - Test 28V
Current - Test 600mA
Power - Output 72W
Voltage Rating DC 65V
Package NI-1230-4LS2L
Manufacturer Package NI-1230-4LS2L
Win Source Part Number 766681-A2T21H410-24SR6
Popularity Medium
Supply and Demand Status Limited
ECCN EAR99
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian A2T21H410-24SR6 CAD Model

Description

The A2T21H410-24SR6 is a state-of-the-art radio frequency (RF) power transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This advanced LDMOS transistor is specifically engineered for use in high-power RF applications, including but not limited to, broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF energy and mobile radio systems.

Key Features

  • High Efficiency: The A2T21H410-24SR6 boasts excellent thermal performance, ensuring high efficiency in energy conversion, which is crucial for reducing overall system power consumption and heat generation.
  • Wide Frequency Range: This RF power transistor operates effectively over a broad frequency spectrum, making it versatile for various applications that require different frequency bands.
  • Robust Power Output: With a robust power output, the A2T21H410-24SR6 is capable of delivering significant RF power, which is essential for high-power applications.
  • Durability: NXP's commitment to quality means that this transistor is built to last, with a design that withstands the rigorous demands of industrial applications.
  • Advanced LDMOS Technology: Leveraging the latest in LDMOS technology, the A2T21H410-24SR6 provides superior performance, including high gain, broad bandwidth, and a high linearity that is necessary for complex signal amplification.

Applications

The versatility of the A2T21H410-24SR6 makes it suitable for a wide range of applications. Its ability to handle high power levels and operate across different frequencies makes it an excellent choice for:

  • Commercial and public broadcast transmitters
  • Industrial heating and welding systems
  • Medical imaging and therapeutic devices
  • Professional and military communication equipment
  • RF energy systems for cooking and lighting

Conclusion

The A2T21H410-24SR6 from NXP Semiconductors represents a blend of innovation, efficiency, and reliability. Its robust design and advanced LDMOS technology make it a top choice for engineers and designers looking to integrate a powerful RF solution into their high-demand applications. With its superior performance and broad application range, the A2T21H410-24SR6 is poised to be a valuable component in the advancement of RF technology.

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Pricing & Ordering

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1+ $695.7039 $695.7039
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