The FQU7N10L is an N-Channel enhancement mode logic level power MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for applications where a low gate drive voltage is required, enabling direct drive from logic circuits. This MOSFET offers low on-resistance and fast switching speeds, making it ideal for efficient power switching.

Applications

• Logic-level controlled circuits
• Solid state relays
• DC-DC converters
• Power management in portable devices
• Motor control applications

Features

• N-Channel MOSFET
• Logic-level gate drive
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche energy rated

Benefits

• Simplified gate drive circuitry
• Improved power efficiency
• Reduced power dissipation
• Enhanced system reliability

Specifications

The FQU7N10L has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 7A. The on-resistance (RDS(on)) is typically 0.19 Ohms at VGS = 5V. It comes in a TO-251 (IPAK) package, which is suitable for surface mounting and provides good thermal characteristics. The logic-level gate drive allows the MOSFET to be directly driven by microcontrollers and other logic devices without the need for additional gate drive circuitry. This reduces component count and simplifies circuit design. The avalanche energy rating provides added protection against transient voltage spikes.