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Same model may have multiple batches, images only for reference.
TSM2301ACX RFG Real Image
Same model may have multiple batches, images only for reference.

TSM2301ACX RFG

Part No TSM2301ACX RFG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -20V,
Datasheet
TSM2301ACX RFG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Max Input Capacitance 480pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1114720-TSM2301ACX RFG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM2301ACX RFG CAD Model

Description

The TSM2301ACX RFG is a MOSFET manufactured by Taiwan Semiconductor.

  • Maximum Power Dissipation: 700mW
  • Popularity: medium
  • Part Number: 1114720-TSM2301ACX RFG
  • Manufacturer Website: www.taiwansemi.com
  • Supply and Demand Status: balanced
  • Type: P-channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.8A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 4.5nC @ 4.5V

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