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TSM2N7002ECX

Part No TSM2N7002ECX
Manufacturer Taiwan Semiconductor
Catalog Electronic Wholesale
Description 50V N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Taiwan Semiconductor
Win Source Part Number 1274801-TSM2N7002ECX
Manufacturer Homepage www.taiwansemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TSM2N7002ECX CAD Model

Description

The TSM2N7002ECX is a N-Channel enhancement mode MOSFET manufactured by Taiwan Semiconductor. This small signal MOSFET is designed for low voltage, low current switching applications.

Applications:

  • Low-Side Switching: Switching small loads and signals.
  • Level Shifting: Translating voltage levels in digital circuits.
  • Load Switching in Portable Devices: Controlling power to small components in battery-powered devices.
  • Analog Switches: Switching analog signals with minimal distortion.
  • Small Signal Amplification: Used in low-power amplifier circuits.

Features:

  • N-Channel MOSFET: Provides efficient switching performance.
  • Low Threshold Voltage (VGS(th)): Allows for operation at low gate voltages.
  • Fast Switching Speed: Enables quick response times.
  • Small Signal MOSFET: Designed for low current and low voltage applications.
  • Surface Mount Package: Facilitates automated assembly and compact designs.
  • RoHS Compliant: Complies with environmental regulations.

Benefits:

  • Low Voltage Operation: Suitable for low-power and battery-operated circuits.
  • Fast Switching: Enables high-speed signal processing.
  • Compact Design: Small surface mount package saves board space.
  • Easy to Use: Simple to integrate into various circuit designs.
  • Low Cost: Provides a cost-effective switching solution.

Additional Details:

The TSM2N7002ECX specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and gate threshold voltage (VGS(th)). It is important to consult the Taiwan Semiconductor datasheet for accurate and complete information on these and other parameters. Key considerations include gate charge, input capacitance, output capacitance, and on-resistance (RDS(on)). This MOSFET offers versatile switching capabilities in various small-signal applications.

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