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Same model may have multiple batches, images only for reference.
TSM4NB60CI C0G Real Image
Same model may have multiple batches, images only for reference.

TSM4NB60CI C0G

Part No TSM4NB60CI C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, PLANA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ITO-220
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1114745-TSM4NB60CI C0G
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian TSM4NB60CI C0G CAD Model

Description

The Taiwan Semiconductor TSM4NB60CI C0G MOSFET manufactured by is an N-channel polarity device with a drain-source breakdown voltage of 600V.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc)
  • Power Dissipation: 50W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 2.5 Ohm @ 2A, 10V
  • Maximum Input Capacitance: 500pF @ 25V
  • Mounting Type: Through Hole
  • Case/Package Dimension: TO-220-3 Full Pack, Isolated Tab

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