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Same model may have multiple batches, images only for reference.
TSM70N750CH Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM70N750CH

Part No TSM70N750CH
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 700V, 6A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 100 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number TSM70
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380174-TSM70N750CH
Ultra Librarian 3D Model Ultra Librarian TSM70N750CH CAD Model

Description

The TSM70N750CH is a N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation.

  • Manufacturer: Taiwan Semiconductor Corporation
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Voltage - Drain to Source (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Gate Charge (Qg) @ Vgs: 10.7nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 555pF @ 100V
  • Power - Max: 62.5W (Tc)
  • Package / Case: TO-251-3 short leads, IPak, TO-251AA
  • REACH: Yes

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