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Same model may have multiple batches, images only for reference.
TSM70N900CP Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM70N900CP

Part No TSM70N900CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 700V, 4.5A, SINGLE N-CHANNEL POW
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 482 pF @ 100 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM70
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380175-TSM70N900CP
Ultra Librarian 3D Model Ultra Librarian TSM70N900CP CAD Model

Description

The TSM70N900CP is a N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Series: TSM70
  • Drain to Source Voltage (Vdss): 700 V
  • Continuous Drain Current (Id): 4.5A @ 25°C
  • On-Resistance (Rds On): 900mOhm @ 1.5A and 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Gate Charge (Qg): 9.7 nC @ 10V
  • Power Dissipation: 50W
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: Surface Mount

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Quantity Unit Price Ext. Price
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43+ $2.7022 $116.1946
67+ $2.6178 $175.3926
92+ $2.5334 $233.0728
118+ $2.4488 $288.9584
158+ $2.1956 $346.9048
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