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CSD13306W

Part No CSD13306W
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 3.5A 6DSBGA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 6 V
Power Dissipation (Max) 1.9W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
Base Product Number CSD13306
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 580827-CSD13306W
Ultra Librarian 3D Model Ultra Librarian CSD13306W CAD Model

Description

The CSD13306W is a state-of-the-art N-Channel NexFET™ power MOSFET from Texas Instruments, designed to deliver high efficiency and performance for a wide range of power management applications. This device is a testament to Texas Instruments' commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The CSD13306W boasts an exceptionally low drain-to-source on-resistance (RDS(on)) of just 59 mΩ at VGS = 10V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With a continuous drain current (ID) of 12A, this MOSFET can handle high current loads, making it suitable for demanding power conversion tasks.
  • Advanced Thermal Performance: The power MOSFET features an advanced package design that enhances thermal performance, ensuring reliability even under high power operation or elevated temperatures.
  • Fast Switching Speed: Engineered for rapid switching, the CSD13306W minimizes transition losses and is ideal for high-frequency applications, such as switch-mode power supplies and DC-DC converters.
  • Low Threshold Voltage: A low gate threshold voltage (VGS(th)) allows for operation at lower gate voltages, which can be beneficial in low-voltage applications.

Applications

The versatile nature of the CSD13306W makes it suitable for a diverse range of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Battery management systems
  • Load switches
  • Hot-swap circuits

Quality and Reliability

Texas Instruments is renowned for its rigorous testing and quality control processes. The CSD13306W is no exception, undergoing stringent checks to ensure it meets the high standards expected by industry professionals. Customers can trust this power MOSFET to deliver consistent performance and durability.

For technical specifications, application notes, and support resources, users can visit the Texas Instruments website or contact their support team for further assistance with the CSD13306W.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2418 $50.7780
445+ $0.2265 $100.7925
690+ $0.2189 $151.0410
985+ $0.2036 $200.5460
1,280+ $0.1959 $250.7520
1,595+ $0.1883 $300.3385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,750 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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