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CSD13385F5T

Part No CSD13385F5T
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description 12V N-CHANNEL NEXFET POWER MOSFE
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 674pF @ 6V
Maximum Gate-Source Voltage 8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 19 mOhm @ 900mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-PICOSTAR
Dimension 3-XFDFN
Win Source Part Number 1030586-CSD13385F5T
Popularity Medium
Supply and Demand Status Balance
Quantity per package 250
Ultra Librarian 3D Model Ultra Librarian CSD13385F5T CAD Model

Description

Introducing the CSD13385F5T from Texas Instruments

The CSD13385F5T is a state-of-the-art N-Channel NexFET™ power MOSFET brought to you by Texas Instruments, a global semiconductor company that designs and manufactures a wide range of integrated circuits. This MOSFET is specifically engineered to deliver high efficiency and power density for a variety of applications. Its compact footprint and low on-resistance make it an ideal choice for power management tasks where space is at a premium and efficiency is paramount.

Key Features of the CSD13385F5T

  • Ultra-Low On-Resistance: The device features an extremely low on-resistance (RDS(on)) of just 8.8 mΩ at VGS = 4.5 V, which significantly reduces power losses and improves overall efficiency in applications.
  • Advanced Packaging: Housed in a tiny 2mm x 2mm SON package, the CSD13385F5T is designed for space-constrained applications. Its compact size does not compromise its performance, making it an excellent choice for portable electronics, wearables, and other small form factor devices.
  • High Continuous Drain Current: It supports a continuous drain current (ID) of 15 A, ensuring robust power delivery for demanding applications.
  • Optimized Gate Charge: The device's low gate charge (Qg) enhances switching performance, which is critical for high-frequency power conversion systems.
  • Thermal Management: The CSD13385F5T has been optimized for excellent thermal performance, ensuring reliability and longevity even under high temperature operating conditions.

Applications

The versatility of the CSD13385F5T allows it to be used in a wide array of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Solutions
  • Motor Control Circuits

With its combination of high performance, efficiency, and compact design, the CSD13385F5T is an excellent choice for designers looking to optimize their power management solutions. Texas Instruments' commitment to quality and innovation ensures that this MOSFET will provide reliable and efficient operation in your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1887 $50.0055
570+ $0.1768 $100.7760
880+ $0.1708 $150.3040
1,260+ $0.1589 $200.2140
1,640+ $0.1529 $250.7560
2,045+ $0.1469 $300.4105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 273,750 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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