The Fairchild/ON Semiconductor FDT458P MOSFET is designed for general purpose applications. It comes in an SMD (SMT) package and has a polarity of P-Channel. The power dissipation (Max) is 3W (Ta). The drain-source breakdown voltage is 30V and the continuous drain current at 25°C is 3.4A (Ta). The gate-source threshold voltage is 3V @ 250μA and the max gate charge is 3.5nC @ 10V. The max input capacitance is 205pF @ 15V and the maximum gate-source voltage is ±20V. The maximum Rds On at Id, Vgs is 130 mOhm @ 3.4A, 10V. The MOSFET can operate in a temperature range of -55°C to 150°C (TJ). It is available in reel - TR packaging and is currently active in the market.