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CSD18535KTTT

Part No CSD18535KTTT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200A TO-263 / Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Series NexFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 200A (Ta), 279A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6620pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 2 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package DDPAK/TO-263-3
Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Win Source Part Number 771877-CSD18535KTTT
Popularity Medium
Supply and Demand Status Limited
Family Name CSD18535KTT
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian CSD18535KTTT CAD Model

Description

Introducing the CSD18535KTT from Texas Instruments

The CSD18535KTT is a state-of-the-art N-Channel NexFET™ Power MOSFET brought to you by Texas Instruments, renowned for their innovative and reliable semiconductor products. This cutting-edge component is designed to deliver high efficiency and power density for a wide range of applications, including power supply systems, motor drives, and high-performance computing.

With an impressive continuous drain current (Id) of 100A, the CSD18535KTT is capable of handling high-current applications with ease. Its low on-resistance (R<sub>DS(on)) of 2.9 mΩ at V<sub>GS of 10V ensures minimal power loss and heat generation, making it an excellent choice for energy-sensitive designs.

The device operates over a broad voltage range with a maximum drain-source voltage (V<sub>DS) of 60V, providing a versatile solution for various circuit topologies. Additionally, the CSD18535KTT offers ultra-low gate charge (Q<sub>g) and output capacitance (C<sub>oss), which results in reduced switching losses and improved overall system efficiency.

Engineered with TI’s advanced silicon technology, the CSD18535KTT is housed in a compact 5 mm x 6 mm SON package with an exposed pad for enhanced thermal performance. This package design ensures that the MOSFET can operate reliably even under high-temperature conditions, making it suitable for demanding environments.

For designers and engineers looking to enhance their power management systems, the CSD18535KTT offers an optimal balance between conduction and switching losses, leading to a more efficient and compact solution. Its robustness and longevity are further ensured by its integrated protection features, including temperature-dependent current limiting and thermal shutdown.

Whether you're developing a power supply for servers, telecom infrastructure, or designing an electric vehicle's powertrain, the CSD18535KTT from Texas Instruments represents a top-tier choice for high-performance power conversion.

Explore the possibilities with the CSD18535KTT and experience the difference that Texas Instruments' quality and innovation can bring to your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.5913 $57.4608
34+ $3.3640 $114.3760
52+ $3.2504 $169.0208
75+ $3.0231 $226.7325
97+ $2.9094 $282.2118
121+ $2.7957 $338.2797
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Availability: 7,380 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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