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CSD75301W1015

Part No CSD75301W1015
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 1.2A 6DSBGA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.2A
Maximum Rds On at Id,Vgs 100 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.1nC @ 4.5V
Max Input Capacitance 195pF @ 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DSBGA (1x1.5)
Win Source Part Number 188913-CSD75301W1015
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD75301W1015 CAD Model

Description

The CSD75301W1015 MOSFET is engineered for high-efficiency power conversion. Its state-of-the-art construction increases performance while reducing both switching losses and heat generation.

Features and Benefits

  • Low-Qg technology for improved speed and efficiency
  • Minimal drive losses
  • Sleek design supporting compact PCBs
  • Robust and reliable package

Applications

  • Laptop DC-DC converters
  • Power management units
  • Industrial power supplies
  • Power tools

The CSD75301W1015 provides the precision needed in your energy-efficient projects, enhancing the design of small- to medium-size power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7828 $50.8820
160+ $0.6423 $102.7680
245+ $0.6223 $152.4635
335+ $0.6022 $201.7370
430+ $0.5821 $250.3030
575+ $0.5219 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,400 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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