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LMG3425R030RQZT

Part No LMG3425R030RQZT
Manufacturer Texas Instruments
Catalog PMIC - Full, Half - Bridge Drivers
Description IC HALF BRIDGE DRVR 1.2A 54VQFN / Half Bridge Driver General Purpose 54-VQFN (12x12)
Datasheet
Sample
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ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Full Half-Bridge Drivers
Mfr Texas Instruments
Package Tape & Reel
Output Configuration Half Bridge
Applications General Purpose
Interface Logic, PWM
Load Type Inductive
Rds On (Typ) 35mOhm
Current - Output / Channel 1.2A
Current - Peak Output 1.2A
Voltage - Supply 7.5V ~ 18V
Voltage - Load 7.5V ~ 18V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Fault Protection Over Current, Over Temperature, UVLO
Mounting Type Surface Mount
Package / Case 54-VQFN Exposed Pad
Supplier Device Package 54-VQFN (12x12)
Base Product Number LMG3425
Standard Package 250
MSL Level 3 (168 Hours)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1345863-LMG3425R030RQZT
Ultra Librarian 3D Model Ultra Librarian LMG3425R030RQZT CAD Model

Description

The LMG3425R030RQZT is a cutting-edge power stage module from Texas Instruments, designed to deliver high-efficiency, high-density power conversion. This module is part of Texas Instruments' GaN (Gallium Nitride) product line, which is renowned for its ability to operate at higher frequencies, voltages, and temperatures than traditional silicon-based components.

Key Features

  • Integrated GaN Power Stage: The LMG3425R030RQZT features an integrated GaN FET with a low on-resistance of 30 mΩ, providing superior power density and efficiency.
  • High Switching Frequency: This module is capable of operating at high switching frequencies, which enables smaller passive components and reduces overall system size and weight.
  • Advanced Packaging: The device comes in a compact QFN package, which ensures excellent thermal performance and simplifies the PCB layout process.
  • Integrated Driver: It includes an optimized driver for the GaN FET, which minimizes driver-related losses and simplifies the design process.
  • Protection Features: The module offers a range of protection features, including over-temperature, over-current, and under-voltage lockout, ensuring reliable operation under various conditions.

Applications

The LMG3425R030RQZT is ideal for a variety of applications where high efficiency and power density are crucial. These applications include:

  • Data center and telecom power supplies
  • Industrial motor drives
  • Power adapters for consumer electronics
  • Renewable energy systems, such as solar inverters
  • High-performance computing and gaming

Product Summary

The Texas Instruments LMG3425R030RQZT GaN power stage module represents a significant advancement in power conversion technology. With its high-efficiency GaN technology, high switching frequency, and robust protection features, this module is engineered to meet the demands of modern high-performance electronics. Its compact size and integrated driver make it an excellent choice for designers looking to optimize their power systems for both performance and space.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $56.1147 $56.1147
3+ $46.0428 $138.1284
4+ $44.6040 $178.4160
5+ $43.1651 $215.8255
6+ $41.7263 $250.3578
9+ $37.4098 $336.6882
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 605 pieces
Order Increment : 1 pcs
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