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Same model may have multiple batches, images only for reference.
XP161A11A1PR Real Image
Same model may have multiple batches, images only for reference.

XP161A11A1PR

Part No XP161A11A1PR
Manufacturer Torex Semiconductor Ltd
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT89
Datasheet
XP161A11A1PR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Torex Semiconductor Ltd
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89
Dimension TO-243AA
Win Source Part Number 214576-XP161A11A1PR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XP161A11A1PR CAD Model

Description

The Torex Semiconductor Ltd XP161A11A1PR is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 4A @ 25°C.

  • Maximum Rds On: 65mOhm @ 2A and 10V
  • Maximum Input Capacitance: 270pF @ 10V
  • Power Dissipation: 2W @ Ta
  • Package: SOT-89
  • Mounting: SMD (SMT) technology
  • Drive Voltage Required for Maximum Rds On: 4.5V
  • Drive Voltage Required for Minimum Rds On: 10V
  • Category: discrete semiconductor products
  • Status: active
  • Supply and Demand Status: balanced

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