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Same model may have multiple batches, images only for reference.
2SA1020-O(F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1020-O(F,M)

Part No 2SA1020-O(F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 2A 50V TO226-3
Datasheet
2SA1020-O(F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1010904-2SA1020-O(F,M)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1020-O(F,M) CAD Model

Description

The 2SA1020-O(F,M) is a PNP transistor from Toshiba Semiconductor and Storage with a TO-92MOD package.

  • Maximum Collector Current: 2A
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce(sat): 500mV @ 50mA and 1A
  • Collector Cut-off Current: 1μA (ICBO)
  • Typical Gain (hFE) (Min): 70 @ 500mA and 2V
  • Maximum Power Dissipation: 900mW
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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