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Same model may have multiple batches, images only for reference.
TPC8051-H(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8051-H(TE12L,Q)

Part No TPC8051-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 13A 8-SOP
Datasheet
TPC8051-H(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 7540pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 115390-TPC8051-H(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8051-H(TE12L,Q) CAD Model

Description

The TPC8051-H(TE12L,Q) is a medium popularity N-channel MOSFET that operates with a voltage range of 20V and a current range of 13A.

  • Popularity: Medium
  • Channel Type: N-channel
  • Voltage Range: 20V
  • Current Range: 13A
  • Maximum Power Dissipation: 1W
  • Temperature Range: -55°C to 150°C
  • Category: Discrete semiconductor products
  • Supply and Demand Status: Balanced

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