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Same model may have multiple batches, images only for reference.
2SA1931,Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1931,Q

Part No 2SA1931,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 5A 50V TO220-3
Datasheet
2SA1931,Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 200mA, 2A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 1V
Maximum Power Dissipation 2W
Frequency - Transition 60MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220NIS
Win Source Part Number 154069-2SA1931,Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1931,Q CAD Model

Description

2SA1931,Q PNP Transistor

The 2SA1931,Q is an advanced PNP bipolar junction transistor known for its high efficiency and reliability. This electronic component is perfect for use in a variety of applications, providing exceptional performance in amplification and switching operations.

Features and Benefits

  • High Current Gain (hFE): Offers superior amplification capabilities, making it ideal for signal amplification applications.
  • Low Saturation Voltage: Provides efficient power consumption and minimizes heat dissipation.
  • Robust Construction: Ensures reliability even in demanding environments.

Applications

  • Audio Amplifiers
  • Signal Processing Circuits
  • Power Management Systems

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37+ $3.1728 $117.3936
57+ $3.0735 $175.1895
78+ $2.9741 $231.9798
101+ $2.8748 $290.3548
135+ $2.5780 $348.0300
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Availability: 1,290 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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