The 2SC2230-Y is an NPN silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low-noise amplifier applications.

Applications

• Low-noise amplifiers (LNAs)
• RF amplifiers
• Oscillator circuits
• Mixer circuits

Features

• Low Noise Figure: Exhibits a low noise figure, making it suitable for sensitive receiver applications.
• High Gain: Provides a high current gain (hFE) for effective signal amplification.
• High Transition Frequency: Features a high transition frequency (fT) for wideband performance.

Benefits

• Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Effective Signal Amplification: High gain ensures strong signal amplification with minimal distortion.
• Wideband Operation: High transition frequency supports use in high-frequency applications.

Additional Details

The 2SC2230-Y is typically available in a small-signal package. Key specifications include a Collector-Base Voltage (VCBO) of 60V, a Collector-Emitter Voltage (VCEO) of 50V, and an Emitter-Base Voltage (VEBO) of 5V. Its continuous collector current (Ic) is 100mA, and power dissipation is 250mW.