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Same model may have multiple batches, images only for reference.
2SC2235(T6KMAT,F,M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2235(T6KMAT,F,M

Part No 2SC2235(T6KMAT,F,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 800MA 120V TO226-3
Datasheet
2SC2235(T6KMAT,F,M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004343-2SC2235(T6KMAT,F,M
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC2235(T6KMAT,F,M CAD Model

Description

The Toshiba Semiconductor and Storage 1004343-2SC2235(T6KMAT,F,M is an NPN transistor that is designed for various electronic applications.

  • Popularity: Medium-popularity
  • Supply and Demand Status: Sufficient
  • Installation and Maintenance: Easy to install and maintain
  • Manufacturer: Trusted manufacturer known for producing high-quality electronic components.
  • Design: Designed to meet the specific needs of various electronic devices.
  • Reliability: Reliable and efficient component that can be used in a wide range of applications.

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