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2SC2383-O(T6OMI,FM

Part No 2SC2383-O(T6OMI,FM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 1A 160V TO226-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 60 @ 200mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1027095-2SC2383-O(T6OMI,FM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC2383-O(T6OMI,FM CAD Model

Description

The 2SC2383-O(T6OMI,FM) is a NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Mounting: Through Hole
  • Maximum Collector-Emitter Breakdown Voltage: 160V
  • Maximum Current Collector: 1A
  • Maximum Power Dissipation: 900mW
  • Application: Suitable for use in a variety of electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7082 $58.5410
13+ $9.6061 $124.8793
19+ $9.3058 $176.8102
26+ $9.0055 $234.1430
34+ $8.7064 $296.0176
45+ $7.8055 $351.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,400 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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