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2SC2873-Y TE12R

Part No 2SC2873-Y TE12R
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 50V 2A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155524-2SC2873-Y TE12R
Popularity Low
Supply and Demand Status Balance
Family Name 2SC2873-Y
Introduction Date December 17, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian 2SC2873-Y TE12R CAD Model

Description

Product Description: 2SC2873-Y TE12R

The 2SC2873-Y TE12R NPN transistor is a refined version of its predecessor, designed with the same fundamental characteristics but optimized for specific demands of modern electronic environments. With its robust construction and reliable performance, this transistor is a vital component in many high-efficiency circuit designs.

Features and Benefits:

  • Enhanced Efficiency: The TE12R suffix signifies a variant that has been optimized for better efficiency in power amplification tasks.
  • Minimal Power Loss: Constructed to minimize power loss, this component ensures longer operational lifetime and consistent output.
  • Standardized Package: The transistor is provided in a standard package that simplifies inclusion in existing circuit designs.
  • High Gain Performance: Particularly designed for applications requiring high current gain, improving overall circuit performance.

Applications:

  • High-fidelity audio amplification systems
  • Enhanced RF circuit designs
  • Drive amplifiers
  • Switching power supplies

Additional Details:

The 2SC2873-Y TE12R is crafted for electronics that prioritize high-current amplification and low power loss. Designed for both audio and RF applications, it excels in diverse environments that demand reliability and efficiency. It integrates seamlessly into high-performance circuits, ensuring stability and durability over extended periods. This capability makes it especially valuable in audio industries and RF-related technologies, confirming its role as a cornerstone component in modern electronics.

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