The Toshiba Semiconductor and Storage RN1903FE(TE85L,F is a pre-biased bipolar transistor array that has a power of 100mW.

• Voltage of collector emitter breakdown: 50V
• Current of collector (Ic) (Max): 100mA
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Vce saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
• Current of collector cutoff: 100nA (ICBO)
• DC current gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Frequency of transition: 250MHz
• Standard package: reel
• Bipolar transistor array is surface mountable and is ideal for use in various electronic applications that require bipolar transistor arrays.