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Same model may have multiple batches, images only for reference.
RN2967FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2967FE(TE85L,F)

Part No RN2967FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2967FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 140336-RN2967FE(TE85L,F)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RN2967FE(TE85L,F) CAD Model

Description

The electronic component with ID 304518 is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 140336-RN2967FE(TE85L,F)
  • Packaging: Reel - TR
  • Mounting: Surface mountable
  • Transition Frequency: 200MHz
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Base Resistor: 10k ohms
  • Emitter Base Resistor: 47k ohms
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Package: ES6
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current: 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: Limited

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