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Same model may have multiple batches, images only for reference.
2SC3709A-Y(F)
Same model may have multiple batches, images only for reference.

2SC3709A-Y(F)

Part No 2SC3709A-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 50V 12A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 400 mV
Element Configuration Single
Emitter Base Voltage (VEBO) 6 V
Gain Bandwidth Product 90 MHz
Lead Free Yes
Max Collector Current 12 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 30 W
Mount Through Hole
Packaging Bulk
Polarity NPN
RoHS Compliant
Transition Frequency 90 MHz
Win Source Part Number 1050826-2SC3709A-Y(F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC3709A-Y(F) CAD Model

Description

The Toshiba Semiconductor and Storage 2SC3709A-Y(F) is an NPN RF transistor designed for use in high-frequency electronic circuits.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: NPN RF transistor
  • Gain Bandwidth Product: 90MHz
  • Maximum Temperature: 150°C
  • Package: TO-220-3
  • Maximum Power Dissipation: 30W
  • Collector-Emitter Breakdown Voltage: 50V
  • Collector Current: 12A
  • ROHS Compliant: Yes
  • Lead-Free: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1289 $59.4491
45+ $2.5676 $115.5420
70+ $2.4867 $174.0690
96+ $2.4070 $231.0720
125+ $2.3262 $290.7750
167+ $2.0859 $348.3453
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Availability: 997 pieces
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