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RN1408(TE85L,F)

Part No RN1408(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Tran NPN S-mini 50V 100A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-236-3
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Element Configuration Single
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 200 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Radiation Hardening No
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 1088711-RN1408(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1408(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1408(TE85L,F) is an RF transistor (BJT) product that comes in a TO-236-3 case/package.

  • Case/Package: TO-236-3
  • Win Source Part Number: 1088711-RN1408(TE85L,F)
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • RoHS: Compliant
  • Transition Frequency: 250 MHz

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