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Same model may have multiple batches, images only for reference.
RN2507(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2507(TE85L,F)

Part No RN2507(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SMV
Datasheet
RN2507(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 098452-RN2507(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2507(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2507(TE85L,F) Transistor is a high-quality device that is ideal for use in a wide range of applications.

  • Supply and demand status: balanced
  • Description: This transistor is designed to provide accurate and efficient performance, and is perfect for use in a variety of different applications.

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