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RN1603(TE85L,F)

Part No RN1603(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SM6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Style SMD/SMT
Package SC-74, SOT-457
Manufacturer Device Package SM6
Win Source Part Number 104249-RN1603(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1603(TE85L,F) CAD Model

Description

The 104249-RN1603(TE85L,F) transistor from Toshiba Semiconductor and Storage is a bipolar (BJT) array, pre-biased product that belongs to the Transistors - Bipolar (BJT) - Arrays, Pre-Biased family.

  • Popularity: Medium popularity
  • Supply and Demand Status: Balance supply and demand status
  • Mounting Style: SMD/SMT
  • Package: SC-74, SOT-457, and SM6 (manufacturer device package)
  • Maximum Power: 300mW
  • Maximum Voltage - Collector Emitter Breakdown: 50V
  • Transistor Type: Dual NPN
  • Frequency-Transition: 250MHz
  • Minimum DC Current Gain (hFE): 70 @ 10mA, 5V
  • Base Resistor (R1): 22k
  • Emitter Base Resistor (R2): 22k

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,379 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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