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Same model may have multiple batches, images only for reference.
RN4988FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4988FE(TE85L,F)

Part No RN4988FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4988FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Style SMD/SMT
Package SOT-563, SOT-666
Manufacturer Device Package ES6
Win Source Part Number 100920-RN4988FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4988FE(TE85L,F) CAD Model

Description

The RN4988FE(TE85L,F) electronic component is a product from Toshiba Semiconductor and Storage manufacturer.

  • Popularity: Medium
  • Supply and Demand Status: sufficient
  • Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Mounting Style: SMD/SMT
  • Maximum Power: 100mW
  • Maximum Voltage: 50V for collector emitter breakdown

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