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2SC5714(TE12,F)

Part No 2SC5714(TE12,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (0 - 9)
Description Trans GP BJT NPN 20V 4A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Collector Emitter Voltage (VCEO) 20 V
RoHS Non-Compliant
Win Source Part Number 1037241-2SC5714(TE12,F)
Categories OEM Parts(0-9)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC5714(TE12,F) CAD Model

Description

The 2SC5714(TE12,F) is an NPN epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-frequency amplification and switching applications.

Applications

  • High-frequency amplifiers
  • Oscillators
  • Mixers
  • Switching circuits
  • RF applications
  • VHF/UHF circuits

Features

  • High transition frequency (fT)
  • Low noise figure
  • High power gain
  • Small package size
  • RoHS compliant

Benefits

  • Excellent high-frequency performance: Suitable for use in demanding RF and microwave applications.
  • Low noise: Minimizes signal distortion and improves sensitivity.
  • High gain: Provides sufficient amplification for weak signals.
  • Compact design: Enables use in space-constrained applications.
  • Reliable operation: Ensures long-term stability and performance.

Additional Details

The (TE12,F) suffix indicates the specific packaging and lead finish options. The transition frequency (fT) is a critical parameter for high-frequency transistors, representing the frequency at which the transistor's current gain drops to unity. A high fT value indicates that the transistor is capable of amplifying signals at high frequencies. The 2SC5714 is designed to operate within specific voltage and current limits, which should be carefully observed to prevent damage to the device.

Proper biasing is essential for optimal performance. The bias network should be designed to provide a stable operating point, ensuring that the transistor operates in the desired region of its characteristics. Heat sinking may be required if the transistor is expected to handle high power levels. The specific thermal resistance and power dissipation ratings should be consulted to determine the appropriate heat sink size.

When selecting a transistor for high-frequency applications, it's important to consider the frequency range, gain requirements, noise figure, and power handling capability. The 2SC5714 offers a good balance of these characteristics, making it a suitable choice for a variety of RF and microwave applications. Consult the manufacturer's datasheet for detailed specifications and application notes.

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