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Same model may have multiple batches, images only for reference.
2SC6010(T2MITUM,FM
Same model may have multiple batches, images only for reference.

2SC6010(T2MITUM,FM

Part No 2SC6010(T2MITUM,FM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 1A 600V SC71
Datasheet
2SC6010(T2MITUM,FM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Max Vce (sat) 1V @ 75mA, 600mA
Collector Cut-off Current(Max) 100μA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 5V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MSTM
Win Source Part Number 1004478-2SC6010(T2MITUM,FM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC6010(T2MITUM,FM CAD Model

Description

The Toshiba Semiconductor and Storage 2SC6010 transistor is a medium popularity electronic component that is commonly used in discrete semiconductor products.

  • Maximum Current Collector: 1A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Typical Gain: 100 @ 100mA and 5V

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