The Toshiba Semiconductor and Storage RF Transistor BJT is a high-quality component that is designed to provide excellent performance and reliability.

• Max Operating Temperature: With a maximum operating temperature of 150°C, this transistor is ideal for use in a wide range of electronic applications.
• VCBO: It features a collector base voltage (VCBO) of 100 V
• VCEO: collector emitter voltage (VCEO) of 100 V
• VEBO: and emitter base voltage (VEBO) of 5 V.
• Max Power Dissipation: The transistor has a maximum power dissipation of 100 W and a maximum collector current of 15 A.
• Compliance: It is lead-free and RoHS compliant.
• Mounting: The transistor is mounted through a hole and has a width of 4.8 mm, height of 20 mm, and length of 15.9 mm.
• Market Status: This product is in short supply and has a low popularity in the open market.