The 2SD878 is a silicon NPN triple diffusion planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-voltage switching regulator and high-speed inverter applications. This transistor is known for its high breakdown voltage and fast switching speeds, making it suitable for power supplies and motor control circuits.

Applications

• Switching Regulators
• High-Speed Inverters
• Power Supplies
• Motor Control Circuits
• High Voltage Amplifiers

Features

• High Collector-Emitter Breakdown Voltage: Enables use in high-voltage circuits.
• Fast Switching Speed: Reduces switching losses in high-frequency applications.
• Low Saturation Voltage: Ensures efficient operation.
• NPN Triple Diffusion Planar Transistor: Offers stable and reliable performance.

Benefits

• Improved Power Supply Efficiency: The fast switching speed and low saturation voltage enhance the efficiency of power supplies.
• Enhanced Inverter Performance: Enables high-speed and efficient inverter operation.
• Enhanced System Reliability: Toshiba's manufacturing quality provides a reliable component for critical systems.
• Versatile Application: Suitable for a wide range of applications, from switching regulators to motor control circuits.
• Simplified Circuit Design: Its characteristics allow for simplified circuit designs with fewer external components.

Technical Specifications

The 2SD878 typically features a collector-emitter voltage (VCEO) of 400V, a collector current (IC) of 5A, and a collector power dissipation (PC) of 60W. It has a typical storage time of 0.8 μs and a fall time of 0.5 μs, allowing it to operate effectively in high-speed applications. The operating temperature range is typically -55°C to +150°C. The device is typically packaged in a TO-220 package, which provides good thermal dissipation.