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2SJ380(F)

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Part No	2SJ380(F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 100V 12A TO220NIS / P-Channel 100 V 12A (Ta) 35W (Tc) Through Hole TO-220NIS
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tube
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	210mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Power Dissipation (Max)	35W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220NIS
Package / Case	TO-220-3 Full Pack
Base Product Number	2SJ380
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1037536-2SJ380(F)
Ultra Librarian 3D Model	Ultra Librarian 2SJ380(F) CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage 2SJ380(F) P-Channel MOSFET is a through hole device.

Drain to Source Voltage (Vdss): 100V
Continuous Drain Current (Id): 12A @ 25°C
Maximum On-Resistance (Rds On): 210mOhm @ 6A and 10V
Gate Charge (Qg): 48nC @ 10V
Input Capacitance (Ciss): 1100pF @ 10Vds

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2SJ380(F)

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