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2SK2998(TPE6,F)

Part No 2SK2998(TPE6,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, N Ch, 0.5A, 500V, TO92
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-92
Continuous Drain Current (ID) 500 mA
Drain to Source Resistance 18 Ω
Drain to Source Voltage (Vdss) 500 V
Fall Time 54 ns
Gate to Source Voltage (Vgs) 30 V
Height 8.2 mm
Input Capacitance 75 pF
Length 5.1 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 900 mW
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 900 mW
Radiation Hardening No
REACH SVHC Unknown
Rise Time 11 ns
RoHS Compliant
Threshold Voltage 4 V
Width 4.1 mm
Win Source Part Number 976918-2SK2998(TPE6,F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2998(TPE6,F) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK2998(TPE6,F) is a through-hole transistor that falls under the category of Transistors - FETs, MOSFETs - RF.

  • Drain to source voltage (Vdss): 500V
  • Continuous drain current (ID): 500mA
  • Power dissipation: 900mW
  • Package: TO-92
  • Supply and demand status: currently experiencing a shortage.
  • RoHS compliant: Yes
  • Maximum operating temperature: 150°C.

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