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2SK3561

Part No 2SK3561
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI) / Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160142-2SK3561
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Family Name 2SK3561
Introduction Date April 10, 2003
ECCN EAR99
Country of Origin Japan, Malaysia
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3561 CAD Model

Description

The 2SK3561 N-channel MOSFET excels in delivering fast and efficient power switching solutions, suitable for a diverse array of electronics. With a focus on minimizing power losses, it supports the construction of more efficient power electronic devices.

Applications

  • Inverters
  • Switch-mode power supplies
  • Battery management systems
  • DC motor controllers

Features & Benefits

  • Lower power dissipation with superior efficiency
  • High-frequency switching capability
  • Durable construction for long-lasting performance
  • Wide temperature range tolerance

Additional Details

This device is crafted for applications demanding reduced power losses and enhanced system efficiency. It is engineered with a package promoting optimal heat transfer, suitable for dense circuit boards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4758 $59.4750
300+ $0.3904 $117.1200
460+ $0.3783 $174.0180
635+ $0.3661 $232.4735
820+ $0.3538 $290.1160
1,095+ $0.3172 $347.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,940 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
Expected Shipping Date
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