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Same model may have multiple batches, images only for reference.
2SK3798(STA4,Q,M)
Same model may have multiple batches, images only for reference.

2SK3798(STA4,Q,M)

Part No 2SK3798(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET TRANSISTOR TO-220(S
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 971460-2SK3798(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian 2SK3798(STA4,Q,M) CAD Model

Description

The 971460-2SK3798(STA4,Q,M) is an N-Channel MOSFET with a drain-source voltage rating of 900V.

  • Drain-Source Voltage: 900V
  • Continuous Drain Current Rating: 4A @ 25°C
  • On-Resistance: 3.5Ohm @ 2A, 10V
  • Package: TO-220-3 full pack
  • Supplier: Toshiba Semiconductor and Storage
  • Product Lineup: Active
  • Temperature Range: 150°C
  • ECCN Classification: EAR99

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