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Same model may have multiple batches, images only for reference.
HN1B01F-GR(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1B01F-GR(TE85L,F)

Part No HN1B01F-GR(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A SM6
Datasheet
HN1B01F-GR(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 120MHz
Mounting Style SMD/SMT
Package SC-74, SOT-457
Manufacturer Device Package SM6
Win Source Part Number 001674-HN1B01F-GR(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1B01F-GR(TE85L,F) CAD Model

Description

The HN1B01F-GR(TE85L,F) is a bipolar transistor array manufactured by Toshiba Semiconductor and Storage. It is designed for use in various applications such as motor control, switching, and amplification. This device has a maximum power dissipation of 300mW and a maximum collector-emitter breakdown voltage of 50V. It features a low collector cutoff current of 100nA and a high DC current gain of 200. The HN1B01F-GR(TE85L,F) is available in a SC-74, SOT-457 package.

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