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Same model may have multiple batches, images only for reference.
HN1C01F-GR(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1C01F-GR(TE85L,F)

Part No HN1C01F-GR(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 50V 0.15A SM6
Datasheet
HN1C01F-GR(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 800MHz
Mounting Style SMD/SMT
Package SC-74, SOT-457
Manufacturer Device Package SM6
Win Source Part Number 001685-HN1C01F-GR(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN1C01F-GR(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage HN1C01F-GR(TE85L,F) is a dual NPN bipolar transistor array. It has a maximum power rating of 300mW and a maximum voltage breakdown of 50V. The transistor can handle a maximum collector current of 150mA and has a DC current gain of 120 at 2mA and 6V. The package is SC-74, SOT-457, and comes in a reel. It is designed for use in various applications and has a transition frequency of 800MHz.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4382 $58.5168
58+ $2.0005 $116.0290
90+ $1.9381 $174.4290
124+ $1.8757 $232.5868
160+ $1.8134 $290.1440
214+ $1.6262 $348.0068
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Availability: 8,470 pieces
MOQ: 24 pcs
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